E3200 GaN缺陷检测设备
适应晶圆尺寸Wafer Size
l Size: 4", 6", 8" compatible; 标配2 cassettes; other sizes upon requests
l Thickness: 350um~1500um（其它厚度需要测试）
缺陷类别及检测能力Defect Inspection Capability
|
Surface Defects |
Materials |
Sensitivity |
|
颗粒particle |
Si |
81nm |
|
GaN on Si, Sapphire, PSS or SiC |
0.2um |
|
|
凹坑 micropit |
Epi pits GaN on Si, Sapphire or SiC |
0.2~0.3um |
|
Epi pits GaN on PSS |
0.5um |
|
|
凸起bump |
Epi bump GaN on Si or SiC |
≥1um bump; depth>5nm |
|
Epi bump GaN on Sapphire or PSS |
≥1um bump; depth>20nm |
|
|
划伤scratch |
GaN substrate |
depth: 10nm；width: 0.4um；length: 10um |
|
GaN Epi |
depth: 30nm；width: 0.5um；length: 10um |
|
|
crescent |
GaN on Si |
81nm |
|
Hex/Hex pit etc |
GaN on Si, SIC，and PSS |
Classified by deep learning algorithms |
|
污点stain |
GaN substrate and GaN Epi |
Diameter≥20um；height>1nm |
|
裂纹 crack |
GaN on Si |
距表面15um内 |
PL缺陷检测：GaN crystal void; Hexagon; dark line, dark spot, fog, GaN crystal defect, PL scratch etc.
