E3200
GaN Defect Inspection
Designed for defect inspection of GaN substrates and GaN epitaxial wafers on various substrates (sapphire, Si, SiC, and GaN), the system integrates multi-channel inspection including DIC brightfield, laser scattering darkfield, and laser photoluminescence (PL), combined with AI-based automatic defect detection and classification. The minimum detectable defect size reaches 60 nm
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Wide applicability for GaN epitaxy defect inspection for various substrate
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Identifies GaN crystal-related defects (Hex, Hexpit, Crack, etc.) to ensure device quality
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Multi-channel detection + AI algorithms ensure inspection efficiency & accuracy
