Designed for defect inspection of wafers including InP, GaAs, LT, LN, glass, and sapphire. The system integrates DIC brightfield and laser scattering darkfield inspection, combined with AI-based automatic defect detection and classification. It enables fast and accurate identification of common defect types such as pits, bumps, particles, and scratches, with a minimum detectable defect size of 60 nm

• Compatible with various substrate and epi wafers
• 60 nm minimum inspection sensitivity